Full area laser doped boron emitter silicon solar cells

We present full area laser doped boron emitter n-type silicon solar cells using sputtered boron as dopant source. Quasi-steady-state photo conductance decay measurements show a low emitter saturation current density J
_0e
and an open circuit voltage limit of V
_oc,lim
702 mV for a 128 Ω/sq emitter proving the high quality of the laser doped boron emitters. The first 4 cm
²
cell yield efficiencies up to η= 16.7% without optimization of the cell structure.