Method of low-temperature formation of horizontally aligned CNT networks on various substrates

The method of direct formation of horizontally aligned CNT networks on top of substrates by conventional thermal CVD with volatile catalyst is report. The main feature of the proposed method is that the temperature of the substrate is kept at 100 - 150°C, while the temperature in the reaction zone of the chamber is 730 - 880°C. The aforementioned is realized by growing CNTs and depositing CNT networks onto the substrate in two different zones of the reactor chamber having different temperatures and the temperature of these zones can be controlled independently. The investigations by scanning and transmission electron microscopy in conjunction with Raman spectroscopy showed that the CNT networks represent bundles of individual single-walled CNT. The Raman spectrum indicated the presence of a small amount of a not fully ordered graphitic carbon, as well as the peaks in the RBM region testify the prevalence of single-walled CNT with diameters of 1.0 nm and 0.87 nm in the bundles.