Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells

Multiple quantum wells (MQW) lattice matched to GaAs consisting of In
_0.14
Ga
_0.76
As wells balanced with GaAs
_0.24
P
_0.76
barriers have been used to extend the absorption of GaAs subcells to longer wavelengths for use in an InGaP/GaAs/Ge triple-junction photovoltaic cell. Thin barriers with high-phosphorus composition are capable of balancing the strain from the InGaAs wells; thus, creating conditions to allow for thicker wells and for carrier tunneling to dominate transport across the structure. As a result, a larger percentage of the depletion region is occupied by InGaAs quantum wells that absorb wavelengths beyond 875 nm and the indium composition is not limited by thermionic emission requirements. Measurements at elevated temperatures and reverse bias suggest that a thermally assisted tunneling mechanism is responsible for transport through the barriers.