Studies on Lattice vibration, impurity and defects in MIS structures using Hf-based dielectrics on Si and SiGe substrates

Lattice dynamics, molecular vibrations as well as defects and traps in ultra-thin Hf-based gate dielectrics on Si and strained-SiGe layers have been studied using inelastic tunneling spectroscopy (IETS). Molecular vibrations, phonons, defects and trap-features are identified from IETS of the samples for comparing and analyzing different interface qualities.