A practical TEM sample preparation method for dopant profile delineation in vertical nanowire tunneling FETs

In this paper, we introduce a sample preparation technique for two-dimensional (2D) dopant concentration profiling in silicon based devices. Selective chemical etching will be shown in a series of tunneling field-effect transistors (FETs). It is experimentally proven that this method offers a high success rate and provides a simple route to Transmission Electron Microscopy (TEM) study of 2D dopant profiles. This method is foreseen to be of great value for dopant-related failure analysis (FA) in silicon based logic and memory devices.