Impact ionization rates in (100) A1 0.48 In 0.52 As

Impact ionization rates for electrons and holes in (100) A1
_0.48
In
_0.52
As were determined from photo multiplication measurements using AIInAs / FaInAs
^{p +-i-n}
diodes grown by metal-organic vapor phase epitaxy (MOVPE). The impact ionization rate ratio (prop; / beta;) was derived as being 2.0 ~ 3.5 over the electric field range from 400 to 650 KV / cm. Ionization rates were found to be smaller than those previously reported.