Numerical analysis of ballistic ultrathin graphene nanoribbon field effect transistors

We have employed a self-consistent solution of open-boundary Schrodinger equation based on the non-equilibrium Green's function formalism coupled to Poisson's equation in order to investigate some important characteristics of graphene nanoribbon FETs. Our simulations enable us to compare parameters such as I
on
, I
off
and on/off current ratios as well as subthreshold swing and g
m
in different channel widths and channel lengths. Our results indicate that given the ability to fabricate perfectly patterned few-nanometers wide GNRs, these devices may be able to outperform the current silicon FETs.