Degradation of High-Frequency Noise in nMOSFETs Under Different Modes of Hot-Carrier Stress

In this paper, high-frequency noise under different hot-carrier (HC) stress modes in nMOSFETs has been characterized and analyzed. The experimental results revealed a significant larger increase in NF
_min
and
Rn
under maximum substrate current
IB
, max stress or hot hole injection
H
_inj
than hot electron injection
E
_inj
. It is suggested that the difference in high-frequency noise after stress strongly depends on the type of defects generated during HC stresses. Our results provide experimental verification that the shallow interface states/traps at the Si/SiO
₂
interface introduced by HC stress play an important role in the degradation of high-frequency channel noise.