Developments of high-power 9xx-nm single emitter laser diodes and laser diode bars

We have developed the 915 nm single emitter LDs with a window structure. A high output power of 20.2 W and a power conversion efficiency of 66% at 10°C have been obtained without COMD. We have also developed the 940 nm LD bars using the thermal expansion controlled assembly technology. As a result, the smile has been successfully suppressed down to 0.7 μm. The power conversion efficiency is as high as 58% at output power of 200W, and the life test promises long-term reliability of the LD bars. The efficient and reliable high power operation of the LD bars with low smile has been compatibly achieved.