Efficiency of Pulsed Terahertz Generation from the Surface of A3B5 Semiconductors

The development of wideband terahertz spectrometers based on femtosecond fiber laser is reported. Experimental investigation is carried out into the efficiency of conversion from laser to terahertz radiation in InSb, InAs, and GaAs semiconductors. The mechanisms of generation of pulsed terahertz radiation from the surface of semiconductors at 1550 nm and 775 nm pump wavelengths are discussed.