Full W-band power amplifier/combiner utilizing GaAs technology

This paper reports the first full-band, W-band (75–110 GHz) power amplifier utilizing GaAs MMICs. The MMIC, developed using a commercially available 0.1µm GaAs pHEMT process, demonstrated a small-signal gain of greater than 15 dB with a typical Psat of 14 dBm across W-band. Four of these MMICs were combined using a low-loss, 4-way septum combiner to produce an output power of 19 dBm ±1 dB across the 75 to 110 GHz band.