Experimental demonstration of a wafer-bonded heterostructure based unipolar transistor with In0.53Ga0.47as channel and III-N drain

We report the first demonstration of a fully functional wafer-bonded current aperture vertical electron transistor (BAVET). A maximum drain current (I
d
) of 29 mA and transconductance (g
m_d
) of 7.4 mS at a V
gs
= 0 V is measured for a device with a width of (75×2) µm and an aperture length (L
ap
) of 8 µm.