Record low tunnel junction specific resistivity (< 3×10−4 Ωcm2) in GaN inter-band tunnel junctions

We report on the design, fabrication, and characterization of record high efficiency inter-band tunnel junctions in GaN. We have achieved tunnel junction specific resistivity values as low as 3×10
⁻⁴
Ωcm
²
by using polarization engineered GaN/InGaN/GaN tunnel junctions. An alternate approach of using rare earth nitride (GdN) nano-islands embedded in degenerately doped GaN p n junction has resulted in tunnel junction specific resistivity of 2.7×10
⁻³
Ωcm
²
. This is the first report of mid gap states assisted tunneling in GaN.