A Gallium Nitride Distributed Bragg Reflector cavity for integrated photonics applications

A deep etched 1D Distributed Bragg Reflector (DBR) cavity in GaN-AlN-Sapphire has been analytically modelled and simulated using 2D FDTD. A 3
^rd
-order DBR has also been modelled including dye loaded polymer layer which can be used for emission enhancement characterization. A structure fabricated using a hybrid Electron Beam-Focused Ion Beam method was assessed using micro-photoluminescence.