InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax

This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (g
_m,max
= 1.73 mS/μm) and high-frequency performance (f
_T
= 245 GHz and f
_max
= 355 GHz) at L
_g
= 100 nm. This record performance is achieved by using a low D
_it
composite Al
₂
O
₃
/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In
_1-x
Ga
_x
As to InAs with similar processing and generalized characterization, including D
_it
.