Continuous characterization of MOSFET from low-frequency noise to thermal noise using a novel measurement system up to 100 MHz

We have developed a novel system for characterizing higher-frequency noise properties of MOSFETs under DC-biases up to 100 MHz. A low-noise amplifier (LNA) was mounted on a unique micro probe-card so that the signal from DUT (on a wafer) is captured with lesser losses. Using this new approach, we have successfully demonstrated the transition of low-frequency (LF) noise to high-frequency (HF) noise, such as thermal noise. In addition, the change in the factors of noise results in lowing the standard variation of noise in a HF region, where intrinsic phenomena derived from the channel conductance play a key roll.