Replacement metal gate extendible to 11 nm technology

This paper describes novel Co-Al metal fill capable of filling sub-10nm trenches. Co-Al fill shows advantages in threshold voltage (V
_TH
) variation. The conductivity of the fill was evaluated using a Co-Al alloy conductance model. By demonstrating better V
_TH
variability, superior conductivity and gap fill, Co-Al shows extendibility to the 11nm metal gate and beyond.