Field-driven ultrafast sub-ns programming in W\Al2O3\Ti\CuTe-based 1T1R CBRAM system

We optimize a 90nm-wide CuTe-based 1T1R CBRAM cell for highly controlled and ultrafast programming by engineering Al
₂
O
₃
electrolyte and Ti buffer layers of appropriate density and thickness resp. By means of electrical and ab initio modeling, we demonstrate that switching is mainly controlled by field-driven motion of Cu
⁺
species. Sub-ns programming is allowed by strong ionic-hopping barrier reduction over short insulating gap. Complete picture of conductance and switching phenomenology is shown in the entire operation range.