Millimeter-wave characterization of Si/SiGe HBTs noise parameters featuring fT/fMAX of 310/400 GHz

High frequency noise parameters (NF
_min
, R
_n
, B
_opt
and G
_opt
) determination of Si/SiGe HBTs from STMicroelectronics B5T technology are provided for the first time in the millimeter-wave range. In this paper, an integrated tuner is used for the extraction of high frequencies noise parameters with the multi-impedance method. The designed tuner is composed an active part with a low noise amplifier (LNA) and a passive part with a high performances travelling wave digitally tunable capacitance (DTC), both in series with a transmission line design for phase shifting. Measurements exhibit a state of the art NF
_min
lower than 2 dB at 68 GHz for the HBT.