Reliability of AlGaN/GaN HEMTs; An overview of the results generatedunder the ONR DRIFT program

Under the ONR DRIFT program a large amount of coordinated work from some of the best groups in the US and Europe has resulted in an unprecedented level of understanding of the degradation mechanisms in AlGaN/GaN HEMTs. The scope of the program is vast and so in this paper only some of the methodologies employed and outcomes of the research will be summarized.