An engineering approach to model current induced by SE for deep sub-micron technology

This paper presents an engineering approach to model photocurrent induced by single event striking on bulk CMOS for deep sub-micron process technology. The photocurrent generated by 1D carrier transport equations is instead of ideal double exponential current model within bias-dependent single-event compact model to analyze the behavior of bulk CMOS being striking. Firstly, the approach using a 1D photocurrent equation to emulate the current curve verses the LET is explained in section II. Then a stand bipolar SPICE model with injection photocurrent is modeled by bipolar affects analysis. This work proposes an improved current injected model.