BIMOS transistor and its applications in ESD protection in advanced CMOS technology

BIMOS transistor is a useful device and now compliant in advanced CMOS technology. This device acts with high controlled current gain. Thus, it is an efficient candidate for Electrostatic Discharge (ESD) protection. Moreover it is well known that ESD protection for advanced CMOS technologies is a major challenge due to down-scaling which introduces a reduction of the intrinsic robustness. This paper introduces the BIMOS ESD approach with simulations in 45nm. Silicon measurements are performed on 32 nm CMOS high k metal gate.