Design of Ku band GaN power HEMT with 3D electromagnetic characterization

An internally matched GaN power HEMT has been realized at Ku band with a newly developed three-dimensional (3D) electromagnetic (EM) design technique, in which the internal matching networks are 3D modeled and characterized, as a whole. This single chip device with 4mm gate width delivers 17.8W power output with more than 30% PAE over 13.8 to 14.3GHz with few adjustments after assembling.