Novel lateral 700V DMOS for integration: Ultra-low 85 mΩ ·cm2 on-resistance, 750V LFCC

A new device concept which is able to break through the silicon limit has been introduced. LFCC (Lateral Floating-Capacitor-Coupled) structure with lateral trench array along drift layer makes drift dose higher than normal RESURF structure with high breakdown voltage. Three dimensional capacitive coupling helps electric field over drift region obtain trapezoidal shape which results in high breakdown voltage with relatively short drift length. Experimental results showed 85 mΩ·cm
²
of specific Ron with 750V of breakdown voltage.