NH3 Plasma Treatment for Flash Memory on Poly-Si Thin Films

In this paper, we fabricated the poly-Si-oxide-nitride-oxide-silicon (SONOS)-type Flash memories on polycrystalline-silicon thin films. Employing a powerful defect passivation technique, i.e., NH3 plasma treatment, the charge storage capability was clearly observed to be remarkably improved including charge storage, drain disturbance, and gate disturbance.