Characterization of test devices for development of nanowire sensor FETs

Characterization of gate-less nanowire (NW) sensor devices by means of test devices of similar geometry, equipped with metal gate electrode, has been proposed in the paper. Details of NW n-FET technology and microscope verification are presented. I
_DS
(V
_GS
) and I
_DS
(V
_DS
) DC characteristics have been measured and discussed in relation to a channel implanted phosphorus dose. 2-fin, 8-fin and 32-fin FETs have been compared using a normalization to the single fin device. A spread of NW devices characteristics and an influence of positive or negative incrementation of the voltage have been investigated. Conclusions related to sensor development have been drawn.