A new algorithm for faster full-thermodynamic device simulations

Full-thermodynamic device simulation solves drift-diffusion (DD), energy balance, and lattice self-heating equations simultaneously and the solution time is extensive. An algorithm to reduce the solution time is presented. The method uses a single lattice temperature to describe the self-heating in the whole semiconductor device. It is shown that the solution time is reduced by 20% and little error is induced compared with the full-thermodynamic simulations. This approach appears useful for submicron device structures.