Performance analysis of double gate MOSFETs with different gate dielectric

Double gate MOSFET is one of the most promising and leading contender for nano regime devices. In this paper we investigate the impact of different gate dielectric on performance of DG-MOSFET. Sentaurus TCAD simulator is used for analysis. It is observed in the results that we can change the threshold voltage by changing the dielectric constant of gate dielectric. The impact of gate dielectric also observed on performance parameters of the DG-MOSFET such as on current, off current, drain induced barrier lowering and sub-threshold slope.