Trap-Assisted Tunneling in Vertical Si and SiGe Hetero-Tunnel-FETs

We demonstrated improved hetero-vertical TFET using Si
_1-x
Ge
_x
source. Temperature measurements indicate that TAT degrades the swing. Simulations match well the experimental data when including the trap-assisted model and suggest that a Ge-source TFET, combined with low material defectivity, can suppress the swing degradation.