T-shaped anode GaN Schottky barrier diode for microwave power rectification

Reduction of ON resistance and OFF capacitance of GaN microwave rectifying diode is realized by applying T-shaped anode wiring together with increase of donor concentration in the active layer. The time constant defined by the product of ON resistance and OFF capacitance is reduced from 2.72ps to 0.79ps while the breakdown voltage decreased from 108V to 50V.