Electrical and Thermal Behavior of Tellurium Poor GeSbTe Compounds for Phase Change Memory

The phase change active material exploration represents an important stage in order to further strengthen the know-how on the Phase Change Memory (PCM) technology. This work reports a path for PCM material exploration toward the tellurium poor region of the GeSbTe (GST) ternary compound system. Data retention enhancement is reported and associated to a factor 1.5 increase of the crystallization activation energy. A detailed description and discussion of the remarkable electrical and thermal parameters of the PCM cell as a function of GST composition is provided.