Reduced NiPtSi Schottky barriers by controlling interface composition and new materials incorporation

Contact resistance (R
_c
) contributes over 65% of the total source to drain series resistance in <; 32 nm CMOS technologies. In this work, reduction of R
_c
is achieved by lowering the SBH through the incorporation of new materials into NiPtSi. The impact of implanted elemental species as well as alloyed low work function metals is discussed. As diffusion and subsequent interface composition is highly dependent on the incorporated material, these NiPtSi junctions with complex composition are often inhomogeneous, making SBH extraction a less trivial task. Advanced analysis for extracting the true SBH of these junctions will also be presented.