Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

We report ion-implanted Er ions into Ge
_11.5
As
₂₄
Se
_64.5
thin films with different doses, and subsequently thermal-annealed the films with different times. The characterization results indicated that the thickness, refractive index and optical bandgap of the films can be stabilized with 3 hour thermal annealing. The 1.5 μm emission arising from the
⁴
I
_13/2
→
⁴
I
_15/2
transition was observed and a lifetime of 1.35 ms was obtained in films annealed at 180°C.