Metamorphic GaAs/AlAs Bragg mirrors deposited on InP for 1.3/1.55 /spl mu/m vertical cavity losers

Long wavelength (1.3/1.5 /spl mu/m) GaAs-GaAlAs vertical cavity surface emitting lasers (VCSEL) with Bragg mirror (GaAs/AlAs) wafer fused on InP substrate exhibits low threshold current and cw operation at room temperature. However the wafer fusion technique requires additional substrate, epitaxy and technological steps. Furthermore the wafer fusion is difficult to achieve on a full 2 inches substrate. A new approach is proposed which consists in the metamorphic growth of GaAs-AlAs Bragg mirrors on InP by gas source molecular beam epitaxy.