Analog parameters of MuGFET devices with different source/drain engineering

This work characterizes the analog performance of SOI n-MuGFETs with different source/drain configurations. Devices without source/drain extension lead to a larger intrinsic voltage gain, even with the reduced transconductance, due to the increased Early voltage. At the same time, they showed a degradation of the interface quality with a larger low-frequency noise and reduced linearity. On the other hand, they can achieve reduced GIDL current due to the suppressed vertical electric field.