Contribution to SER Prediction: A New Metric Based on RC Transient Simulations

This work focuses on speeding up simulation time of SEU systematic detection in a 90 nm SRAM cell. Simulations were run in order to validate a simplified approach based on the injection of a noise source current at the sensitive node of an analytical RC circuit. Moreover, a new SEU reliability metric, mandatory for reliability studies, is introduced. It is based on based on transient I–V simulations.