A low power SiGe HBT LNA For UWB applications

A low noise amplifier (LNA) is implemented in this work for ultra wide band (UWB) localization and sensing systems within a wide frequency range starting from 400MHz and up to 10GHz. The topology used is a resistive shunt feedback and a peaking inductance in series with the output transistor to achieve the desired bandwidth and have better noise performance. The LNA is fabricated in low cost 0.25μm 92GHz f
_max
SiGe-HBT-BiCMOS process technology. The area of the manufactured chip is 0.73mm
²
. The achieved gain is 12dB with a NF less than 3.7dB over the entire frequency range while the consumed power is only 14.5mW.