An inverted-gap analog tuning RF-MEMS capacitor with 250 milliwatts power handling capability

A novel analog tuning MEMS variable capacitor is presented. By using an inverted-gap configuration, the mechanical effects of large RF-signals can be cancelled. Fabricated devices could handle 250 mW of power, with measured 2.2:1 capacitance variation, very high Q, and extremely low parasitic series inductance up to 10 GHz.