Study on the dielectric properties of (Sr.Ca)TiO/sub 3/-based ceramics for the capacitor materials

The dielectric properties of (Sr.Ca)TiO/sub 3/-based boundary layer (BL) capacitor materials were investigated. (Sr.Ca)TiO/sub 3/-based compositions were fired at 1350/spl deg/C in a N/sub 2/ atmosphere to get the based semiconductive ceramics. The Nb/sub 2/O/sub 5/ was chosen for semiconductor of grain. The metal oxides of CuO were printed on the semiconductive ceramics, and those were fired at 1200/spl deg/C for the subsequent grain boundary diffusion. The grain size of the semiconductive ceramics was about 20 /spl mu/m and the apparent permittivity of the resulting material varied between 2/spl times/10/sup 4/ and 3/spl times/10/sup 4/.