Reliable extraction of series resistance in silicon nanowire FETs using Y-function technique

Series resistance (R
_sd
) and mobility attenuation factors (θ
₁
, and θ
₂
) of silicon nanowire FET (NWFET) are simultaneously extracted using Tanaka method (YΦ method) and Y-function technique. Consecutively, simulated drain current (I
_d
) and transconductance (g
_m
) is precisely fitted to the measured data with the extracted θ
₁
, θ
₂
, and R
_sd
. Significantly reduced mobility degradation due to volume inversion effect makes the Rsd values extracted from both the Y-function technique and the YΦ method practically the same. It is quantitatively confirmed that the Y-function technique assuming constant mobility is quite reliable to extract R
_sd
. Moreover, the dependence of the R
_sd
on the channel diameter (d
_nw
) and the doping condition (n-, p-type) is investigated. It is shown that extension resistance (R
_ext
) increases as d
_nw
decreases and R
_sd
of p-type NWFET is smaller than that of n-type NWFET.