In-situ TEM biasing experiments to study thickness-dependent ferroelectric domain switching of Pb(Zr,Ti)O3 films

We devised a novel in-situ TEM characterization technique to study the size effects in ferroelectric polarization emerging at nanometer scales. For this purpose, an in-situ TEM holder fitted to a TEM column was used, through which voltage can be applied to a Pb(Zr,Ti)O
3
ferroelectric thin film. In-situ observation of the nucleation and growth behaviors of ferroelectric domains will be presented.