Effects of Bonding Parameters on the Reliability of Fine-Pitch Cu/Ni/SnAg Micro-Bump Chip-to-Chip Interconnection for Three-Dimensional Chip Stacking

As the demands for portable electronic products increase, through-silicon-via (TSV)-based three-dimensional integrated-circuit (3-D IC) integration is becoming increasingly important. Micro-bump-bonded interconnection is one approach that has great potential to meet this requirement. In this paper, a 30-μm pitch chip-to-chip (C2C) interconnection with Cu/Ni/SnAg micro bumps was assembled using the gap-controllable thermal bonding method. The bonding parameters were evaluated by considering the variation in the contact resistance after bonding. The effects of the bonding time and temperature on the IMC thickness of the fabricated C2C interconnects are also investigated to determine the correlation between its thickness and reliability performance. The reliability of the C2C interconnects with the selected underfill was studied by performing a -55°C- 125°C temperature cycling test (TCT) for 2000 cycles and a 150°C high-temperature storage (HTS) test for 2000 h. The interfaces of the failed samples in the TCT and HTS tests are then inspected by scanning electron microscopy (SEM), which is utilized to obtain cross-sectional images. To validate the experimental results, finite-element (FE) analysis is also conducted to elucidate the interconnect reliability of the C2C interconnection. Results show that consistent bonding quality and stable contact resistance of the fine-pitch C2C interconnection with the micro bumps were achieved by giving the appropriate choice of the bonding parameters, and those bonded joints can thus serve as reliable interconnects for use in 3-D chip stacking.