Modelling of hemispherical ground inhomogeneities

The influence of a semi-conducting hemispherical inhomogeneity on ground electrode placed inside of it, is analyzed. The applied procedure is based on a recently proposed approximate Green's function for the point source inside a semiconducting hemisphere. The results are compared with those obtained by other two different models based on application of the boundary elements method, i.e. the Green's function for the point source inside a double-layered hemispherical inhomogeneity.