Analysis and simulation of a 45nm high-K/metal PD-SOI DTMOS under forward bias

As effective gate length and gate oxide thickness in Metal-Oxide-Semiconductor (MOS) transistors are aggressively scaled down for higher performance and circuit density, the levels for gate leakage current [1-2], standby power consumption [1-2] and gate oxide reliability [3] are degraded. Therefore, now hafnium dioxide (HfO
₂
) is being incorporated into the gate stack of silicon based MOSFETs.