Low-temperature fabrication of fully transparent InGaZnO thin film transistors with Ga-doped ZnO source/drain

During the last decades, amorphous silicon (a-Si) has been widely used for thin film transistors (TFTs). However, the need for an alternative to a-Si TFTs for next-generation display has increased. Therefore, transparent oxide semiconductor (TOS) has gathered a great amount of attention for use in active-matrix liquid-crystal displays (AM-LCDs), organic light-emitting diodes (OLEDs), and transparent flexible displays due to its good electrical properties, low temperature processing, and high transparency [1]. Among many TOSs, amorphous InGaZnO (a-IGZO) is one of the representative materials since it has a high mobility of ~10 cm
²
/Vs and large area uniformity [2, 3].