GIDL and F-N tunneling current correction on charge pumping techniques for profiling traps in high-k gated MOSFETs

In summary, the impact of parasitic leakage component (including GIDL and F-N gate leakage current) on CP measurements has been investigated and two methods were proposed to overcome this issue, based on the eliminating of static leakage current. The lateral and depth profiles of trap distribution in high-k MOSFETs are extracted by the corrected CP techniques.