Novel MOSFET structure using p-n junction gate for ultra-low subthreshold-swing

As complementary metal oxide semiconductor (CMOS) has been scaled down and supply voltage has been reduced, it becomes important to reduce subthreshold swing (SS) in order to obtain high on/off current ratio. To decrease SS below 60 mV/dec, tunneling field effect transistor (TFET) has been reported and studied recently[1-3]. However, as TFET uses band-to-band tunneling as its current source, it is difficult to obtain high on-current. In order to solve this problem of the conventional TFET and maintain high on-current while lowering SS, novel device using p-n junction gate is proposed in this paper.