Low frequency noise investigation of AlGaN/GaNOn silicon Schottky diode

This paper presents the low frequency noise investigation of the AlGaN/GaN on silicon Schottky diode. The noise power spectral density of various sizes of the AlGaN/GaN Schottky diodes under different biasing voltages has been measured. The 1/f behaviour is observed before the corner frequency and the effect of the multi-finger contact is also been determined. With increasing number of fingers, higher 1/f noise is observed. However, if the frequency is increased further, the noise power density is noted to decay more rapidly. This therefore implies that a low thermal noise floor has been achieved.