High performance Si.45Ge.55 Implant Free Quantum Well FET featuring low temperature process, eSiGe stressor and transversal strain relaxation

In this work, we report high performance Si
_.45
Ge
_.55
Implant Free Quantum Well (IFQW) pFET with high drive current of 1.28mA/um at Ioff=160nA/um at channel length/width of 30nm/0.16um (Vdd=-1V). This is enabled by 1) low temperature process which maintains the integrity of the high mobility of Si
_.45
Ge
_.55
channel, 2) embedded SiGe (eSiGe) stressor which is fully compatible with SiGe channel and 3) relaxation of unwanted transversal stress at narrow width channel which results in a significant mobility boost (1.9× mobility improvement from active width of 10um to 0.1um).