First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach

The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In
_0.53
Ga
_0.47
As channel and atomic-layer-deposited (ALD) Al
₂
O
₃
/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III-V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel length (L
_ch
) down to 50nm. A detailed scaling metrics study (S.S., DIBL, V
_T
) with L
_ch
of 50nm - 110nm and fin width (W
_Fin
) of 30nm - 50nm are carried out, showing the immunity to short channel effects with the advanced 3D structure. The GAA structure has provided a viable path towards ultimate scaling of III-V MOSFETs.